Junghun Kim
Korea Electrotechnology Research Institute
ORCID: 0000-0002-0982-6373Also affiliated with Korea Institute of Materials Science, Korea Economic Research Institute, Korea University of International Studies, Hanyang University
Pilot corpus only
This score is computed over theSindex pilot corpus and does not cover the full scientific literature. Scores are relative to papers we have ingested — papers, authors, and institutions outside the pilot are not represented. Methodology.
Indexed papers
Why this DataRank?
An author's DataRank is the sum of the DataRanks of all 1 indexed paper attributed to them. A prolific author with many moderate-impact papers can outrank one with a single high-impact paper.
Author scores recompute whenever paper DataRanks are refreshed, so this number lags the underlying paper scores by at most one batch run.
Read the full methodology →Papers
Driven by 3 papers. Top paper: “4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance”.
Kwangsoo Kim, Junghun Kim
Junghun Kim, Sydney N. Gregg, Brigitte F. Schmidt, Xiju Xia, Yulong Li +2 more
Junghun Kim, Brigitte F. Schmidt, David L. Deitcher, Edwin S. Levitan, Markus K. Klose