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Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Advanced Electronic Materials(2024)10.1002/aelm.202400843Source: DataRank Database

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors is a research paper published in Advanced Electronic Materials (2024). On theSindex it has a DataRank of 0. It has been cited 10 times.

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0DataRank · unranked

Scored on demand from live citation data

Open Access10 citations

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›Methodology & internals

datarank_citation_only_1hop_v6· scope data_onlyMethodology

Pipeline:MetadataData-paper checkEnrichmentCitation networkScoring

Enrichment:Funding (3 grants)Impact (FWCI 1.06)OA: goldTopics (23)IDs (PubMed, PMC, OpenAlex)

FAIR Checklist

Context only (not used in score)

Findable (1/2)

Has DOI

Accessible (1/2)

Open Access

Interoperable (0/2)

Reusable (0/3)

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Authors (5)

Yue Zhang ORCID,William P. King ORCID,Rashid Bashir ORCID,Arend M. van der Zande ORCID,Sihan Chen ORCID

Live enrichment

PubMed:40778193 PMC:PMC12327469 OpenAlex:https://openalex.org/W4405199861

Division of Materials Research

Grant: 2309037

National Human Genome Research Institute

Grant: R21HG010701

Taiwan Semiconductor Manufacturing Company

Grant: 089401

FWCI

1.06

Citation Percentile

0.8%

Citation Trend

2025

2026

goldLicense: cc-by

journalhttps://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202400843

publisherhttps://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202400843

publisherhttps://advanced.onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202400843

journalhttps://doi.org/10.1002/aelm.202400843

repositoryhttps://pubmed.ncbi.nlm.nih.gov/40778193

Fields of Study

2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications

Keywords

Materials scienceMonolayerDopingField-effect transistorContact resistanceOptoelectronicsTransistorExtension (predicate logic)NanotechnologyEngineering physicsElectrical engineeringComputer scienceLayer (electronics)EngineeringScanning Probe LithographyWse2Short ChannelSelective-area DopingContact InterlayerTungsten Oxyselenide